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| NTHD2102P Power MOSFET -8.0 V, -4.6 A Dual P-Channel ChipFETt Features * Offers an Ultra Low RDS(on) Solution in the ChipFET Package * Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 * * * * * making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology Pb-Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP 50 mW @ -4.5 V -8.0 V 68 mW @ -2.5 V 100 mW @ -1.8 V S1 S2 -4.6 A ID MAX G1 G2 Applications * Optimized for Battery and Load Management Applications in * * Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications Charge Control in Battery Chargers Buck and Boost Converters D1 P-Channel MOSFET D2 P-Channel MOSFET ChipFET CASE 1206A STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous - 5 seconds Total Power Dissipation Continuous @ TA = 25C (5 sec) @ TA = 25C Continuous @ 85C (5 sec) @ 85C Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID PD 1.1 2.1 0.6 1.1 TJ, Tstg Is -55 to +150 -1.1 C A C/W RqJA RqJA TL 60 113 260 C Value -8.0 "8.0 -3.4 -4.6 Unit V V A W PIN CONNECTIONS D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 1 2 3 4 MARKING DIAGRAM 8 7 6 5 D5 M Shipping 3000/Tape & Reel 3000/Tape & Reel D5 = Specific Device Code M = Month Code ORDERING INFORMATION Device NTHD2102PT1 NTHD2102PT1G Package ChipFET ChipFET (Pb-Free) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2004 1 December, 2004 - Rev. 4 Publication Order Number: NTHD2102P/D NTHD2102P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate-Body Leakage Current Zero Zero Gate Voltage Drain Current V(Br)DSS IGSS IDSS VGS = 0 V, ID = -250 mA VDS = 0 V, VGS = "8.0 V VDS = -6.4 V, VGS = 0 V VDS = -6.4 V, VGS = 0 V, TJ = 85C VDS = VGS, ID = -250 mA VGS = -4.5 V, ID = -3.4 A VGS = -2.5 V, ID = -2.7 A VGS = -1.8 V, ID = -1.0 A VDS = -5.0 V, ID = -3.4 A IS = -1.1 A, VGS = 0 V -8.0 - - - - - "100 -1.0 -5.0 V nA mA Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-to-Source On-Resistance VGS(th) RDS(on) -0.45 - - - - - - 50 68 100 8.0 -0.8 -1.5 58 85 160 - -1.2 V mW Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge gFS VSD S V Ciss Coss Crss VDS = -6.4 V VGS = 0 V f = 1.0 MHz - - - 715 160 120 - - - pF td(on) tr td(off) tf Qg Qgs Qgd VDD = -6.4 V VGS = -4.5 V ID = -3.2 A RG = 2.0 W VGS = -2.5 V ID = -3.2 A VDS = -6.4 V IF = -0.9 A, di/dt = 100 8.0 20 20 15 8.0 2.2 4.0 15 - - - - 16 - - 30 ns nC Source-Drain Reverse Recovery Time trr nA 2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHD2102P TYPICAL ELECTRICAL CHARACTERISTICS 10 -2.4 thru -8 V 8 -ID,Drain Current (A) -2 V 6 -1.8 V -ID,Drain Current (A) TJ = 25C 8 10 6 4 4 Tj = 100C 2 25C 2 -1.6 V -1.4 V -55C 3.0 0 0 1 2 3 4 5 -VDS, Drain-to-Source Voltage (V) 6 0 0 0.5 1.0 1.5 2.0 2.5 -VGS, Gate-to-Source Voltage (V) Figure 1. On-Region Characteristics 0.30 r DS(on),On-Resistance ( ) 0.25 VGS = -1.8 V 0.20 0.15 0.10 0.05 VGS = -4.5 V 0 0 2 3 5 4 6 -ID, Drain Current (A) 7 8 0.8 -50 -25 VGS = -2.5 V r DS(on),On-Resistance ( ) (Normalized) 1.2 Figure 2. Transfer Characteristics VGS = -4.5 V 1.1 1.0 0.9 0 25 50 75 100 TJ, Junction Temperature (C) 125 150 Figure 3. On-Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V -IDSS, Leakage (nA) C, Capacitance (pF) 1000 TJ = 125C 1500 1200 900 600 300 1 0 2 4 6 -VDS, Drain-to-Source Voltage (V) 8 0 -8 1800 Figure 4. On-Resistance Variation vs. Temperature TJ = 25C Ciss 100 Tj = 100C 10 Crss Ciss Coss Crss -6 0 2 4 -4 -2 -VDS, Drain-to-Source Voltage (V) 6 8 Figure 5. Drain-to-Source Leakage Current vs. Voltage Figure 6. Capacitance Variation http://onsemi.com 3 NTHD2102P TYPICAL ELECTRICAL CHARACTERISTICS 4 -V Gate-to-Source Voltage (V) GS, 8 -VDS, Drain-to-Source Voltage (V) 1000 VDD = -10 V ID = -1 A VGS = -4.5 V 100 t, Time (ns) td(off) tf tr 10 td(on) 3 QT Q1 2 Q2 -VGS 6 4 1 -VDS 0 0 1 2 3 4 5 6 TJ = 25C ID = -3.4 A 7 8 2 0 1 0 Qg, Total Gate Charge (nC) 10 RG, Gate Resistance (Ohms) 100 Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 50 VGS = 0 V TJ = 25C -I S,Source Current (A) 4 Power (W) 40 Figure 8. Resistive Switching Time Variation vs. Gate Resistance 5 3 30 2 20 1 10 0 0.40 0.50 0.60 0.70 0.80 0.90 -VSD, Source-to-Drain Voltage (V) 1.00 0 10-4 10-3 10-2 10 -1 1 Time (sec) 10 100 600 Figure 9. Diode Forward Voltage vs. Current Figure 10. Single Pulse Power http://onsemi.com 4 NTHD2102P TYPICAL ELECTRICAL CHARACTERISTICS 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 0.1 0.1 0.05 0.02 Single Pulse 10-3 10-2 10 -1 1 Square Wave Pulse Duration (sec) PDM t1 t2 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RqJA = 90C/W 3. TJM - TA = PDMZqJA(t) 4. Surface Mounted 10 100 600 0.01 10-4 Figure 11. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (sec) 1 10 Figure 12. Normalized Thermal Transient Impedance, Junction-to-Foot http://onsemi.com 5 NTHD2102P PACKAGE DIMENSIONS ChipFET CASE 1206A-03 ISSUE E A 8 7 6 5 M K 5 6 3 7 2 8 1 S 1 2 3 4 B 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 2.00 1.80 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 L G D J STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 C 0.05 (0.002) SOLDERING FOOTPRINTS* 2.032 0.08 0.457 0.018 0.635 0.025 0.635 0.025 2.032 0.08 1.092 0.043 0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 mm inches 0.66 0.026 0.254 0.010 SCALE 20:1 mm inches Basis *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. Style 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTHD2102P/D |
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